Check out the latest publication from CoCooN introducing a new plasma-enhanced atomic layer deposition (PE-ALD) process for depositing high-quality gallium (III) sulfide (Ga2S3) sulfide thin films. Ga2S3 possesses immense potential in the context of energy storage and optoelectronic applications. The traditional thermal ALD processes for Ga2S3 have often yielded amorphous, nonstoichiometric films with unwanted contaminants. In stark contrast, the new PE-ALD process, employing the hexakis(dimethylamido)digallium precursor and H2S plasma co-reactant, produces crystalline Ga2S3 films at a low temperature of 125°C. These films are smooth, stoichiometric, and free from carbon and oxygen impurities. A detailed characterization reveals their cubic crystal structure with a preferred orientation, along with a bandgap of 3.2eV.